HZM68ZMFA Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon Planar Zener Diode for Surge Absorb

HZM6.8ZMFA
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd ^*1
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C
Note 1. Four device total, See Fig.2.
Electrical Characteristics (Ta = 25°C) ^*1
Item
Symbol Min Typ Max
Zener voltage
V_Z
Reverse current
I_R
Capacitance
C
6.47 — 7.00
— —2
— — 25
Dynamic resistance r _d
ESD-Capability ^{*2 *3} —
— — 30
25 — —
Notes 1. Per one device.
2. Failure criterion ; I_R > 2 µA at V_R = 3.5V.
3. Between cathode and anode.
Unit
V
µA
pF
Ω
kV
Test Condition
I_Z = 5 mA, 40ms pulse
V_R = 3.5V
V_R = 0V, f = 1 MHz
I_Z = 5 mA
C =150pF, R = 330Ω, Both forward and
reverse direction 10 pulse
2