HZM68MFA Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon Planar Zener Diode for Surge Absorb

HZM6.8MFA
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd ^*1
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C
Note 1. Four device total, With P.C board.
Electrical Characteristics (Ta = 25°C) ^*1
Item
Symbol Min Typ Max Unit
Zener voltage
V_Z
Reverse current
I_R
Capacitance
C
6.47 —
——
——
7.00 V
2
µA
130 pF
Dynamic resistance r _d
ESD-Capability ^*2 —
— — 30 Ω
30 — — kV
Notes 1. Per one device.
2. Failure criterion ; IR > 2 µA at VR = 3.5V.
Test Condition
I_Z = 5 mA, 40ms pulse
V_R = 3.5V
V_R = 0V, f = 1 MHz
I_Z = 5 mA
C =150pF, R = 330Ω, Both forward and
reverse direction 10 pulse
2