HZM62ZWA Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Zener Diode for Surge Absorb

HZM6.2ZWA
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd ^*1
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C
Note 1. Two device total, See Fig.2.
Electrical Characteristics (Ta = 25°C) ^*1
Item
Symbol Min Typ Max Unit Test Condition
Zener voltage
V_Z
5.90 — 6.50 V
I_Z = 5 mA, 40ms pulse
Reverse current
I_R
— —3
µA V_R = 5.5V
Capacitance
C
— 8.0 8.5 pF V_R = 0V, f = 1 MHz
Dynamic resistance r _d
ESD-Capability ^*2 —
— — 60 Ω
I_Z = 5 mA
13 — — kV C =150pF, R = 330 Ω, Both forward and
reverse direction 10 pulse
Notes 1. Per one device.
2. Failure criterion ; IR>3 µA at VR = 5.5V.
2