HZM43FA Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Zener Diode for Surge Absorb

HZM4.3FA
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd ^*1
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note: 1. Four device total, With P.C board.
Electrical Characteristics (Ta = 25°C) ^*2
Item
Symbol Min Typ Max
Zener voltage
V_Z
Reverse current
I_R
Capacitance
C
4.01 — 4.48
— — 10
— — 150
Dynamic resistance r _d
ESD-Capability ^*1 —
— — 130
30 — —
Notes: 1. Failure criterion ; I_R ≥ 10 µA at V_R = 1V.
2. Per one device.
Unit
V
µA
pF
Ω
kV
Test Condition
I_Z = 5 mA, 40ms pulse
V_R = 1V
V_R = 0V, f = 1 MHz
I_Z = 5 mA
C =150pF, R = 330 Ω, Both forward and
reverse direction 10 pulse
2