HZC22 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Zener Diode for Surge Absorb

HZC Series
Absolute Maximum Ratings
(Ta = 25°C)
Item
Power dissipation
Junction temperature
Storage temperature
Note: 1. See Fig2.
Symbol
Pd *¹
Tj
Tstg
Value
Unit
150
mW
150
°C
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Zener voltage
Reverse current Dynamic resistance ESD-Capability *²
Type
HZC2.0
V_Z (V) *¹
Min Max
1.90 2.20
Test
Condition
I_Z (mA)
5
I_R (µA)
Max
120.0
Test
Condition
V_R (V)
0.5
r_d (Ω)
Max
100
Test
Condition
I_Z (mA)
5
— (kV) *²
Min
30
HZC2.2 2.10 2.40 5
120.0 0.7
100
5
30
HZC2.4 2.30 2.60 5
120.0 1.0
100
5
30
HZC2.7 2.50 2.90 5
120.0 1.0
110
5
30
HZC3.0 2.80 3.20 5
50.0 1.0
120
5
30
HZC3.3 3.10 3.50 5
20.0 1.0
130
5
30
HZC3.6 3.40 3.80 5
10.0 1.0
130
5
30
HZC3.9 3.70 4.10 5
10.0 1.0
130
5
30
HZC4.3 4.01 4.48 5
10.0 1.0
130
5
30
HZC4.7 4.42 4.90 5
10.0 1.0
130
5
30
HZC5.1 4.84 5.37 5
5.0
1.5
130
5
30
HZC5.6 5.31 5.92 5
5.0
2.5
80
5
30
HZC6.2 5.86 6.53 5
2.0
3.0
50
5
30
HZC6.8 6.47 7.14 5
1.0
3.5
30
5
30
HZC7.5 7.06 7.84 5
1.0
4.0
30
5
30
HZC8.2 7.76 8.64 5
0.5
5.0
30
5
30
HZC9.1 8.56 9.55 5
0.5
6.0
30
5
30
HZC10
9.45 10.55 5
0.5
7.0
30
5
30
HZC11
10.44 11.56 5
0.5
8.0
30
5
30
Notes: 1. Tested with pulse (Pw = 40 ms).
2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse
Failure criterion ; According to IR spec
Rev.1, Jan. 2002, page 2 of 6