HVU187 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator

HVU187
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
V_R
I_F
P_d
Tj
Tstg
Value
Unit
60
V
50
mA
100
mW
125
°C
-55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit
Reverse current
I_R
Forward voltage
V_F
Capacitance
C
— — 100 nA
— — 1.0 V
— — 2.4 pF
Forward resistance r_f
ESD-Capability^*1
—
3.5 —
200 —
5.5 Ω
—V
Notes 1. Failure criterion ; IR ≥ 100nA at VR = 60V
Test Condition
V_R = 60V
I_F = 10 mA
V_R = 0V, f = 1 MHz
I_F = 10 mA, f = 100 MHz
C=200pF , Both forward and reverse direction
1 pulse.
2