HVU133 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Pin Diode for High Frequency Switching

HVU133
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Power dissipation
Junction temperature
Storage temperature
Symbol
V_R
P_d
Tj
Tstg
Value
Unit
30
V
150
mW
125
°C
-55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Reverse voltage
V_R
Reverse current
I_R
Forward voltage
V_F
Capacitance
C₁
C₆
Forward resistance r_f
30 — — V
I_R = 1µA
— — 100 nA V_R = 25V
— — 0.85 V
I_F = 2 mA
— — 1.0 pF V_R = 1V, f = 1 MHz
— — 0.9
V_R = 6V, f = 1 MHz
— 0.55 0.7 Ω
I_F = 2mA, f = 100 MHz
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