HTT1213E Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial Twin Transistor

HTT1213E
Absolute Maximum Ratings
(Ta = 25 °C)
Item
Symbol
Collector to base voltage
V
CBO
Collector to emitter voltage
V_CEO
Emitter to base voltage
V_EBO
Collector current
I
C
Collector power dissipation
P
C
Junction temperature
Tj
Storage temperature
Tstg
*Value on PCB. (FR–4(13 x 13 x 0.635 mm))
Ratings
Q1 and Q2
Unit
15
V
4
V
1.5
V
50
mA
Total 200*
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Q1 and Q2)
(Ta = 25 °C)
Item
Symbol Min
Collector to base breakdown V
15
(BR)CBO
voltage
Collector cutoff current
I_CBO

Collector cutoff current
I_CEO

Emitter cutoff current
I_EBO

DC current transfer ratio
h_FE
100
Reverse transfer capacitance C_re

Typ




130
0.30
Gain bandwidth product
f_T
10
12
Forward transfer coefficient |S₂₁|²
13
16
Noise figure
NF

1.0
Max

0.1
1
0.2
170
0.45


2.0
Unit
V
mA
mA
mA

pF
GHz
dB
dB
Test conditions
I = 10 µA, I = 0
C
E
V_CB = 15 V, I_E = 0
V_CE = 4 V, R_BE = infinite
V_EB = 0.8 V, I_C = 0
V_CE = 1 V, I_C = 5 mA
V_CB = 1 V, f = 1 MHz
Emitter ground
V_CE = 1 V, I_C = 5 mA, f = 1 GHz
V_CE = 1 V, I_C = 5 mA,
f = 900 MHz,
Γ = Γ = 50 Ω
S
L
Rev.0, Aug. 2001, page 2 of 4