HSM2694 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Diode for Tuner Band Switch

HSM2694
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Power dissipation
Junction temperature
Storage temperature
Operation temperature
Note: Two device total
Symbol
V_R
Pd*
Tj
Tstg
Topr
Value
Unit
35
V
150
mW
125
°C
–45 to +125
°C
–20 to +60
°C
Electrical Characteristics (Ta = 25°C)*
Item
Symbol Min Typ Max Unit Test Condition
Reverse voltage
V_R
Reverse current
I_R
Forward voltage
V_F
Capacitance
C
Forward resistance
r_f
Note: Per one device
35
—
—
V
I_R = 10µA
—
—
50
nA
V_R = 25V
—
—
1.0
V
I_F = 10mA
—
—
1.2
pF
V_R = 6V, f = 1MHz
—
—
0.9
Ω
I_F = 2mA, f = 100MHz
2.0
f = 100MHz
1.5
1.0
0.5
0
10^–4
10^–3
Forward current I_F (A)
10^–2
Fig.1 Forward resistance Vs. Forward current
2