HSM198S Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode forVarious Detector, High speed switching

HSM198S
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Average forward current
Junction temperature
Storage temperature
Note: Two device total
Symbol
V_R
I_O*
Tj
Tstg
Value
Unit
10
V
30
mA
125
°C
–55 to +125
°C
Electrical Characteristics (Ta = 25°C)*¹
Item
Symbol Min Typ Max Unit Test Condition
Forward voltage
V_F
Reverse current
I_R
Forward current
I_F
Capacitance
C
Capacitance deviation ∆V_F
Rectifier efficiency
η
ESD Capability
—
—
—
—
—
4.5 —
—
—
—
—
70
—
30
—
1.1
V
I_F = 5mA
70
µA
V_R = 6V
—
mA
V_F = 1V
1.5
pF
V_R = 1V, f = 1MHz
10
mV
I_F = 5mA
—
%
Vin = 2Vrms, f = 40MHz,
R_L = 5kΩ, C_L = 20pF
—
V
*²C = 200pF, Both forward and
reverse direction 1 pulse
Notes: 1. Per one device
2. Failure Criterrion; I_R ≥ 140 µA at V_R = 6V
2