HAT2053M Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET Power Switching

HAT2053M
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V_DSS
20
V
Gate to source voltage
V_GSS
±12
V
Drain current
I_D*²
6.1
A
Drain peak current
I *1
D(pulse)
24.4
A
Body-drain diode reverse drain current I_DR*²
6.1
A
Channel dissipation
Pch
*²
(pulse)
2.0
W
Pch *3
(continuous)
1.05
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW≤ 5s,Ta=25°C
3. When using the alumina ceramic board (50 x 50 x 0.7 mm) ,Ta=25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 20
Gate to source leak current
I _GSS
—
Zero gate voltege drain current
I _DSS
—
Gate to source cutoff voltage
V_GS(off)
0.4
Static drain to source on state
R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance
|y_fs|
6.5
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse
recovery time
t _rr
—
Note: 1. Pulse test
Typ
—
—
—
—
28
37
11
570
220
160
15
100
90
105
0.95
(50)
Max
—
±0.1
1
1.4
33
48
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I_D = 10mA, V_GS = 0
V_GS = ±12V, V_DS = 0
V_DS = 20 V, V_GS = 0
V_DS = 10V, I _D = 1mA
I_D = 3A, V_GS = 4.5V *¹
I_D = 3A, V_GS = 2.5V *¹
I_D = 3A, V_DS = 10V *¹
V_DS = 10V
V_GS = 0
f = 1MHz
V_GS = 4.5V, I_D = 3A
R_L = 3.3Ω
IF = 6.1A, V_GS = 0 *¹
IF = 6.1A, V_GS = 0
diF/ dt =20A/µs
2