HAT1044M Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET Power Switching

HAT1044M
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V_DSS
-30
V
Gate to source voltage
V_GSS
±20
V
Drain current
I_D*²
-4.5
A
Drain peak current
I *1
D(pulse)
-18
A
Body-drain diode reverse drain current I_DR*²
-4.5
A
Channel dissipation
Pch
*²
(pulse)
2.0
W
Pch *3
(continuous)
1.05
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW≤ 5s,Ta=25°C
3. When using the alumina ceramic board (50 x 50 x 0.7 mm) ,Ta=25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS -30
Gate to source leak current
I _GSS
—
Zero gate voltege drain current
I _DSS
—
Gate to source cutoff voltage
V_GS(off)
-1.0
Static drain to source on state
R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance
|y_fs|
3
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse
recovery time
t _rr
—
Note: 1. Pulse test
Typ Max
—
—
—
±0.1
—
-1
—
-2.5
50
60
80
105
5.5 —
600 —
220 —
150 —
12
—
85
—
55
—
55
—
-0.95 —
50
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I_D = 10mA, V_GS = 0
V_GS = ±20V, V_DS = 0
V_DS = -30 V, V_GS = 0
V_DS = -10V, I _D = -1mA
I_D = -3A, V_GS = -10V *¹
I_D = -3A, V_GS = -4.5V *¹
I_D = -3A, V_DS = -10V *¹
V_DS = -10V
V_GS = 0
f = 1MHz
V_GS = -10V, I_D = -3A
R_L = 3.3Ω
IF = -4.5A, V_GS = 0 *¹
IF = -4.5A, V_GS = 0
diF/ dt =-20A/µs
2