BB405M Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB405M
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
Unit
12
V
+10
V
–0
±10
V
25
mA
150
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 12
Gate1 to source breakdown voltage V_(BR)G1SS +10
Gate2 to source breakdown voltage V_(BR)G2SS ±10
Gate1 to source cutoff current
I _G1SS
—
Gate2 to source cutoff current
I _G2SS
—
Gate1 to source cutoff voltage
V_G1S(off)
0.4
Gate2 to source cutoff voltage
V_G2S(off)
0.4
Input capacitance
c _iss
2.3
Output capacitance
c _oss
1.1
Reverse transfer capacitance
c _rss
—
Drain current
I_D(op) 1
10
I_D(op) 2
—
Forward transfer admittance
|y_fs|1
23
|y_fs|2
—
Power gain
PG1 24
PG2 —
Noise figure
NF1 —
NF2 —
Typ Max Unit
—
—
V
—
—
V
—
—
V
—
+100 nA
—
±100 nA
0.7 1.0 V
0.7 1.0 V
2.8 3.5 pF
1.5 1.9 pF
0.017 0.04 pF
15
20
mA
13
—
mA
28
—
mS
28
—
mS
28
—
dB
28
—
dB
1.4 1.9 dB
1.4 —
dB
Test Conditions
I_D = 200µA, V_G1S = V_G2S = 0
I_G1 = +10µA, V_G2S = V_DS = 0
I_G2 = ±10µA, V_G1S = V_DS = 0
V_G1S = +9V, V_G2S = V_DS = 0
V_G2S = ±9V, V_G1S = V_DS = 0
V_DS = 5V, V_G2S = 4V, I_D = 100µA
V_DS = 5V, V_G1S = 5V, I_D = 100µA
V_DS = 5V, V_G1 = 5V
V_G2S =4V, R_G = 82kΩ
f = 1MHz
V_DS = 5V, V_G1 = 5V
V_G2S = 4V, R_G = 82kΩ
V_DS = 9V, V_G1 = 9V
V_G2S =6V, R_G = 220kΩ
V_DS = 5V, V_G1 = 5V, V_G2S =4V
R_G =82kΩ, f = 1kHz
V_DS = 9V, V_G1 = 9V, V_G2S =6V
R_G = 220kΩ, f = 1kHz
V_DS = 5V, V_G1 = 5V, V_G2S =4V
R_G = 82kΩ, f = 200MHz
V_DS = 9V, V_G1 = 9V, V_G2S =6V
R_G = 220kΩ, f = 200MHz
V_DS = 5V, V_G1 = 5V, V_G2S =4V
R_G = 82kΩ, f = 200MHz
V_DS = 9V, V_G1 = 9V, V_G2S =6V
R_G = 220kΩ, f = 200MHz
2