BB304C Datasheet, PDF (2/12 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB304C
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
V_DS
V_G1S
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
V_G2S
I_D
Pch
Tch
Tstg
Electrical Characteristics (Ta = 25°C)
Ratings
Unit
12
V
+10
V
–0
±10
V
25
mA
100
mW
150
°C
–55 to +150
°C
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 12
Gate1 to source breakdown voltage V_(BR)G1SS +10
Gate2 to source breakdown voltage V_(BR)G2SS ±10
Gate1 to source cutoff current
I _G1SS
—
Gate2 to source cutoff current
I _G2SS
—
Gate1 to source cutoff voltage
V_G1S(off)
0.4
Gate2 to source cutoff voltage
V_G2S(off)
0.5
Typ
—
—
—
—
—
—
—
Max Unit
—
V
—
V
—
V
+100 nA
±100 nA
1.0 V
1.0 V
Test Conditions
I_D = 200µA, V_G1S = V_G2S = 0
I_G1 = +10µA, V_G2S = V_DS = 0
I_G2 = +10µA, V_G1S = V_DS = 0
V_G1S = +9V, V_G2S = V_DS = 0
V_G2S = +9V, V_G1S = V_DS = 0
V_DS = 5V, V_G2S = 4V
I_D = 100µA
V_DS = 5V, V_G1S = 5V
I_D = 100µA
2