2SK1621L Datasheet, PDF (2/3 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1621 L , 2SK1621 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max Unit Test Conditions
———————————————————————————————————————————–
Drain to source breakdown
V_(BR)DSS 250
—
voltage
—
V
I_D = 10 mA, V_GS = 0
———————————————————————————————————————————
Gate to source breakdown
voltage
V_(BR)GSS ±20
—
—
V
I_G = ±100 µA, V_DS = 0
———————————————————————————————————————————
Gate to source leak current
I_GSS
—
—
±10 µA V_GS = ±16 V, V_DS = 0
———————————————————————————————————————————
Zero gate voltage drain current I_DSS
—
—
250 µA V_DS = 200 V, V_GS = 0
———————————————————————————————————————————
Gate to source cutoff voltage V_GS(off)
2.0
—
4.0
V
I_D = 1 mA, V_DS = 10 V
———————————————————————————————————————————
Static Drain to source on state R_DS(on)
—
resistance
0.40
0.55 Ω
I_D = 4 A, V_GS = 10 V *
———————————————————————————————————————————
Forward transfer admittance |y_fs|
2.7
4.5
—
S
I_D = 4 A, V_DS = 10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
820
—
pF V_DS = 10 V, V_GS = 0,
————————————————————————————————
Output capacitance
Coss
—
370
—
pF f = 1 MHz
————————————————————————————————
Reverse transfer capacitance Crss
—
115
—
pF
———————————————————————————————————————————
Turn-on delay time
t_d(on)
—
12
—
ns I_D = 4 A, V_GS = 10 V,
————————————————————————————————
Rise time
t_r
—
48
—
ns R_L = 7.5 Ω
————————————————————————————————
Turn-off delay time
t_d(off)
—
70
—
ns
————————————————————————————————
Fall time
t_f
—
50
—
ns
———————————————————————————————————————————
Body to drain diode forward
V_DF
voltage
—
1.2
—
V
I_F = 7 A, V_GS = 0
———————————————————————————————————————————
Body to drain diode reverse
t_rr
—
400
—
ns I_F = 7 A, V_GS = 0,
recovery time
di_F/dt = 50 A/µs
———————————————————————————————————————————
* Pulse Test
See characteristic curves of 2SK741.