 English |
|
|
|
|
|
|
|
| 2SK1575 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
| |||
| ◁ |
2SK1575
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
Pch*1
Tch
Tstg
Ratings
Unit
180
V
±20
V
16
A
200
W
150
°C
â55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage*1
V(BR)DSS 180
Gate to source breakdown
voltage*1
V(BR)GSS ±20
Zero gate voltage drain current*1 IDSS
â
Gate to source cutoff voltage*1 VGS(off) 0.5
Drain to source cutoff voltage*1 VDS(on) â
Forward transfer admittance*1 |yfs|
0.9
Input capacitance*1
Ciss â
Output capacitance*1
Coss â
Reverse transfer capacitance*1 Crss â
Output Power
Po
180
Drain Efficiency
ηD
â
Notes: 1. Shows / unit FET
2. Pulse Test
Typ Max Unit
â
â
V
â
â
V
â
1
mA
â
2.0
V
3.8
6.0
V
1.25 â
S
440 â
pF
75
â
pF
0.5
â
pF
220 â
W
65
â
%
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = 140 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V*2
ID = 3 A, VDS = 20 V*2
VGS = 5 V, VDS = 0
f = 1 MHz
VDS = 50 V, VGS = 0
f = 1 MHz
VGD = â50 V, f = 1 MHz
VDS = 80 V, IDQ = 0.2 A
f = 190 MHz, Pin = 10 W
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese