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2SK1093 Datasheet, PDF (2/3 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET
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2SK1093
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown
V(BR)DSS 60
—
—
V
ID = 10 mA, VGS = 0
voltage
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS ±20
—
—
V
IG = ±100 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
—
—
±10 µA VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current IDSS
—
—
250 µA VDS = 50 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage VGS(off)
1.0
—
2.0
V
ID = 1 mA, VDS = 10 V
———————————————————————————————————————————
Static drain to source on state RDS(on)
—
resistance
0.12 0.15 Ω
———————
ID = 5 A, VGS = 10 V *
——————————–
0.17 0.22
ID = 5 A, VGS = 4 V *
———————————————————————————————————————————
Forward transfer admittance |yfs|
3.5
6.0
—
S
ID = 5 A, VDS = 10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
400
—
pF VDS = 10 V, VGS = 0,
————————————————————————————————
Output capacitance
Coss
—
220
—
pF f = 1 MHz
————————————————————————————————
Reverse transfer capacitance Crss
—
60
—
pF
———————————————————————————————————————————
Turn-on delay time
td(on)
—
5
—
ns ID = 5 A, VGS = 10 V,
————————————————————————————————
Rise time
tr
—
55
—
ns RL = 6 Ω
————————————————————————————————
Turn-off delay time
td(off)
—
140
—
ns
————————————————————————————————
Fall time
tf
—
90
—
ns
———————————————————————————————————————————
Body to drain diode forward
VDF
voltage
—
1.2
—
V
IF = 10 A, VGS = 0
———————————————————————————————————————————
Body to drain diode reverse
trr
—
125
—
ns IF = 10 A, VGS = 0,
recovery time
diF/dt = 50 A/µs
———————————————————————————————————————————
* Pulse Test
See characteristic curves of 2SK970.
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