2SK1070 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon N-Channel Junction FET

2SK1070
Absolute Maximum Ratings (Ta = 25°C)
Item
Gate to drain voltage
Gate to source voltage
Drain current
Gate current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_GDO
V_GSO
I_D
I_G
Pch
Tch
Tstg
Ratings
Unit
–22
V
–22
V
50
mA
10
mA
150
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max
Gate cutoff current
I _GSS
—
—
–10
Gate to source breakdown
V_(BR)GSS
–22
—
—
voltage
Drain current
I
*¹
DSS
6
—
40
Gate to source cutoff voltage V_GS(off)
0
—
–2.5
Forward transfer admittance _yfs
20
30
—
Input capacitance
Ciss
—
9
—
Note: 1. The 2SK1070 is grouped by I_DSS as follows.
Grade
B
C
D
E
Mark
PIB
PIC
PID
PIE
I _DSS
6 to 14
12 to 22
18 to 30
27 to 40
Unit
nA
V
mA
V
mS
pF
Test conditions
V_GS = –15 V, V_DS = 0
I_G = –10 µA, V_DS = 0
V_DS = 5 V, V_GS = 0, Pulse test
V_DS = 5 V, I_D = 10 µA
V_DS = 5 V, V_GS = 0, f = 1 kHz
V_DS = 5 V, V_GS = 0, f = 1 MHz
See characteristic curves of 2SK435.
2