2SJ247 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ247
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T_C = 25°C
Symbol
V_DSS
V_GSS
I_D
I *¹
D(pulse)
I _DR
Pch*²
Tch
Tstg
Ratings
Unit
–100
V
±20
V
–8
A
–32
A
–8
A
40
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS –100
Gate to source breakdown
voltage
V_(BR)GSS ±20
Gate to source leak current
I _GSS
Zero gate voltage drain current I_DSS
Gate to source cutoff voltage V_GS(off)
Static drain to source on state R_DS(on)
resistance
—
—
–1.0
—
—
Forward transfer admittance |y_fs|
3.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body to drain diode forward V_DF
—
voltage
Body to drain diode reverse t_rr
—
recovery time
Typ
—
—
—
—
—
0.25
0.3
5.5
880
325
80
12
47
150
75
–1.0
170
Max Unit
—
V
—
V
±10 µA
–250 µA
–2.0 V
0.3
Ω
0.45 Ω
—
S
—
pF
—
pF
—
pF
—
ns
—
ns
—
ns
—
ns
—
V
—
ns
Test conditions
I_D = –10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = –80 V, V_GS = 0
I_D = –1 mA, V_DS = –10 V
I_D = –4 A, V_GS = –10 V*¹
I_D = –4 A, V_GS = –4 V*¹
I_D = –4 A, V_DS = –10 V*¹
V_DS = –10 V, V_GS = 0,
f = 1 MHz
I_D = –4 A, V_GS = –10 V,
R_L = 7.5 Ω
I_F = –8 A, V_GS = 0
I_F = –8 A, V_GS = 0,
di_F/dt = 50 A/µs
2