2SJ217 Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ217
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T_C = 25°C
Symbol
V_DSS
V_GSS
I_D
I *¹
D(pulse)
I _DR
Pch*²
Tch
Tstg
Ratings
Unit
–60
V
±20
V
–45
A
–180
A
–45
A
150
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS –60
Gate to source breakdown
voltage
V_(BR)GSS ±20
Gate to source leak current
I _GSS
Zero gate voltage drain current I_DSS
Gate to source cutoff voltage V_GS(off)
Static drain to source on state R_DS(on)
resistance
—
—
–1.0
—
—
Forward transfer admittance |y_fs|
16
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body to drain diode forward V_DF
—
voltage
Body to drain diode reverse t_rr
—
recovery time
Note 1. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
±10 µA
—
–250 µA
—
–2.0 V
0.033 0.042 Ω
0.045 0.06
25
—
S
3800 —
pF
2000 —
pF
490 —
pF
30
—
ns
235 —
ns
670 —
ns
450 —
ns
–1.35 —
V
300 —
ns
Test conditions
I_D = –10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = –50 V, V_GS = 0
I_D = –1 mA, V_DS = –10 V
I_D = –20 A, V_GS = –10 V*¹
I_D = –20 A, V_GS = –4 V*¹
I_D = –20 A, V_DS = –10 V*¹
V_DS = –10 V, V_GS = 0,
f = 1 MHz
I_D = –20 A, V_GS = –10 V,
R_L = 1.5 Ω
I_F = –45 A, V_GS = 0
I_F = –45 A, V_GS = 0,
di_F/dt = 50 A/µs
2