2SD2651 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial High Voltage Amplifier

2SD2651
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
Unit
300
V
300
V
5
V
50
mA
750
mW
150
°C
-55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit Test Conditions
Collector cutoff current
I _CBO
—
—
I _CEO
—
—
Emitter cutoff current
I _EBO
—
—
Base to emitter voltage
V_BE
—
—
DC current transfer raito
h_FE
80
—
Collector to emitter saturation V_CE(sat)
—
—
voltage
0.1
µA
0.1
µA
10
µA
0.75 V
160
—
0.5
V
V_CB = 300V, I_E = 0
V_CB = 300V, R_BE = ∞
V_EB = 5 V, I_C = 0
V_CE = 6V, I _C = 1mA
V_CE = 6V, I_C = 2mA
I_C = 30mA, I_B = 3mA
2