2SD2247 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SD2247
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
Tj
Tstg
Ratings
Unit
55
V
50
V
5
V
100
mA
–100
mA
200
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V_(BR)CBO 55
—
voltage
Collector to emitter breakdown V_(BR)CEO 50
—
voltage
Emitter to base breakdown
V_(BR)EBO
5
—
voltage
Collector cutoff current
I _CBO
—
—
Emitter cutoff current
I _EBO
—
—
DC current transfer ratio
h_FE*¹
100 —
Collector to emitter saturation V_CE(sat)
—
—
voltage
Base to emitter voltage
V_BE
—
0.67
Gain bandwidth product
f_T
—
—
Collector output capacitance Cob
—
1.8
Note: 1. The 2SD2247 is grouped by h_FE as follows.
Grade
B
C
h_FE
100 to 200 160 to 320
Max
—
—
—
0.5
0.5
320
0.2
0.75
100
3.5
Unit
V
V
V
µA
µA
V
V
Mhz
pF
Test conditions
I_C = 10 µA, I_E = 0
I_C = 1 mA, R_BE = ∞
I_E = 10 µA, I_C = 0
V_CB = 40 V, I_E = 0
V_EB = 4 V, I_C = 0
V_CE = 12 V, I_C = 2 mA
I_C = 10 mA, I_B = 1 mA
V_CE = 12 V, I_C = 2 mA
V_CE = 12 V, I_C = 2 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
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