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| 2SD2213 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial, Darlington | |||
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2SD2213
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
E to C diode forward current
Symbol
VCBO
VCEO
VEBO
IC
ic (peak)
PC
Tj
Tstg
ID
Ratings
Unit
150
V
80
V
8
V
1.5
A
3
A
0.9
W
150
°C
â55 to +150
°C
1.5
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V(BR)CBO 150 â
voltage
Collector to emitter breakdown V(BR)CEO 80
â
voltage
Emitter to base breakdown
V(BR)EBO
8
â
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I CBO
I CEO
hFE
hFE
hFE
VCE(sat)
â
â
â
â
2000 â
5000 â
1000 â
â
â
Base to emitter saturation
VBE(sat)
â
â
voltage
E to C diode forward voltage VD
Note: 1. Pulse test
â
â
Max Unit
â
V
â
V
â
V
5.0 µA
5.0 µA
â
30000
â
1.5 V
2.0 V
3.0 V
Test conditions
IC = 1 mA, IE = 0
IC = 10 mA, RBE = â
IE = 50 mA, IC = 0
VCB = 120 V, IE = 0
VCE = 65 V, IE = â
VCE = 2 V, IC = 0.15 A*1
VCE = 2 V, IC = 1 A*1
VCE = 2 V, IC = 1.5 A*1
IC = 1 A*1, IB = 1 mA
IC = 1 A*1, IB = 1 mA
ID = 1.5 A*1
2
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