2SD2115 Datasheet, PDF(2/5 Page) Hitachi Semiconductor – Silicon NPN Epitaxial Planar(Low frequency power amplifier)

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2SD2115 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial Planar(Low frequency power amplifier)

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2SD2115(L)/(S)

Electrical Characteristics (Ta = 25Â°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 150 â

voltage

Collector to emitter breakdown V(BR)CEO 60

voltage

Emitter to base breakdown

V(BR)EBO

voltage

Collector cutoff current

I CBO

DC current transfer ratio

hFE

150 â

Collector to emitter saturation VCE(sat)

voltage

Base to emitter saturation

VBE(sat)

voltage

Fall time

Note: 1. Pulse test.

Max Unit

ÂµA

0.8 V

1.3 V

0.6 Âµs

Test conditions

IC = 1 mA, IE = 0

IC = 10 mA, RBE = â

IE = 1 mA, IC = 0

VCB = 100 V, IE = 0

VCE = 5 V, IC = 1.5 A*1

IC = 1.5 A, IB = 0.05 A*1

IC = 1.5 A, IB1 = âIB2 = 50 mA

Maximum Collector Dissipation Curve

100

150

Case temperature TC (Â°C)

Area of Safe Operation

3.0 iC(peak)

IC(max)

1.0

0.3

0.1

Ta = 25Â°C,

1 shot pulse

0.03

100

Collector to emitter voltage VCE (V)

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