2SD1976 Datasheet, PDF(2/6 Page) Hitachi Semiconductor

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2SD1976 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

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2SD1976

Absolute Maximum Ratings (Ta = 25Â°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Diode current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25Â°C.

Symbol

VCBO

VCEO

VEBO

ID*1

I C(peak)

PC * 1

Tstg

Rating

Unit

300

150

Â°C

â55 to +150

Â°C

Electrical Characteristics (Ta = 25Â°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 300 â

voltage

Collector to emitter sustain

voltage

VCEO(SUS) 300

Emitter to base breakdown

V(BR)EBO

voltage

Collector cutoff current

I CEO

DC current transfer ratio

hFE

500 â

Collector to emitter saturation VCE(sat)

voltage

Base to emitter saturation

VBE(sat)

voltage

Emitter to collector diode

forward voltage

VECF

Turn on time

Storage time

Fall time

t on

1.2

t stg

8.0

Max Unit

420 V

100 ÂµA

1.5 V

2.0 V

3.5 V

Âµs

Test conditions

IC = 0.1 mA, IE = 0

IC = 3 A, RBE = â, L = 10 mH

IE = 50 mA, IC = 0

VCE = 300 V, RBE = â

VCE = 2 V, IC = 4 A

IC = 4 A, IB = 40 mA

IF = 6 A

IC = 4 A, VCC = 20 V

IB1 = âIB2 = 40 mA

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