2SD1137 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

2SD1137
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V_(BR)CEO 100 —
voltage
Emitter to base breakdown
V_(BR)EBO
4
—
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
I _CEO
—
—
I _EBO
—
—
h_FE
50
—
25
—
Collector to emitter saturation V_{CE (sat)} —
—
voltage
Note: 1. Pulse test.
Max Unit
—
V
—
V
100 µA
50
µA
250
350
1.0 V
Test conditions
I_C = 10 mA, R_BE = ∞
I_E = 1 mA, I_C = 0
V_CE = 80 V, R_BE = ∞
V_EB = 3.5 V, I_C = 0
V_CE = 4 V
I_C = 0.5 A*¹
I_C = 50 mA
I_C = 1 A, I_B = 0.1 A
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature T_C (°C)
Area of Safe Operation
10
(10 V, 4 A)
3
1.0
DC Operation
T_C = 25°C
(40 V, 1 A)
0.3
0.1
(100 V, 50 mA)
0.03
0.01
13
10 30 100 300 1,000
Collector to emitter voltage V_CE (V)
2