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| 2SD1101 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial | |||
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2SD1101
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)
PC
Tj
Tstg
Ratings
Unit
25
V
20
V
5
V
0.7
A
1
A
150
mW
150
°C
â55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V(BR)CBO 25
â
voltage
Collector to emitter breakdown V(BR)CEO 20
â
voltage
Emitter to base breakdown
V(BR)EBO
5
â
voltage
Collector cutoff current
I CBO
â
â
DC current transfer ratio
hFE*1
85
â
Collector to emitter saturation VCE(sat)
â
â
voltage
Base to emitter voltage
VBE
â
â
Notes: 1. The 2SD1101 is grouped by hFE as follows.
2. Pulse test
Grade
B
C
Mark
AB
AC
hFE
85 to 170 120 to 240
Max Unit
â
V
â
V
â
V
1.0 µA
240
0.5 V
1.0 V
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE = â
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 1 V, IC = 0.15 A*2
IC = 0.5 A, IB = 0.05 A*2
VCE = 1 V, IC = 0.15 A*2
See characteristic curves of 2SD467.
2
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