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2SC5773 Datasheet, PDF (2/13 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial UHF / VHF wide band amplifier | |||
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2SC5773
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current
IC
Collector power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
* When using aluminium ceramic board (25 x 60 x 0.7 mm)
Ratings
15
6
1.5
80
700*
150
â55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V(BR)CBO
15
voltage
Collector cutoff current
I CBO
â
Collector cutoff current
I CEO
â
Emitter cutoff current
I EBO
â
DC current transfer ratio
hFE
80
Collector output capacitance Cob
â
Reverse transfer capacitance Cre
â
Gain bandwidth product
fT
8
S21 parameter
|S21|2
â
Power gain
PG
9
Noise figure
NF
â
Typ
â
â
â
â
120
1.25
0.98
10.8
11
11.9
1.1
Max
â
1
1
10
160
1.8
â
â
â
â
1.9
Unit
V
µA
mA
µA
V
pF
pF
GHz
dB
dB
dB
Test Conditions
IC = 10µ A, IE = 0
VCB = 12 V, IE = 0
VCE = 6 V, RBE = â
VEB = 1.5 V, IC = 0
VCE = 5 V, IC = 50 mA
VCB = 5 V, IE = 0
f = 1 MHz
VCB = 5 V, IE = 0
f = 1 MHz
VCE = 5 V, IC = 50 mA
f = 1 GHz
VCE = 5 V, IC = 50 mA
f = 1 GHz
VCE = 5 V, IC = 50 mA
f = 900 MHz
VCE = 5 V, IC = 5 mA
f = 900 MHz
2
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