2SC5759 Datasheet, PDF (2/13 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial UHF / VHF wide band amplifier

2SC5759
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Collector to base voltage
V_CBO
Collector to emitter voltage
V_CEO
Emitter to base voltage
V_EBO
Collector current
I_C
Collector power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
* When using aluminium ceramic board (12.5 x 20 x 0.7 mm)
Ratings
15
6
1.5
80
200*
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V_(BR)CBO
15
voltage
Collector cutoff current
I _CBO
—
Collector cutoff current
I _CEO
—
Emitter cutoff current
I _EBO
—
DC current transfer ratio
h_FE
80
Collector output capacitance Cob
—
Gain bandwidth product
f_T
8
Power gain
PG
7
Noise figure
NF
—
S₂₁ parameter
Output IP3
|S₂₁|²
—
OIP3
—
Typ
—
—
—
—
120
1.2
10.6
11.5
1.1
10.3
36
Max
—
1
1
10
160
2.2
—
—
1.9
—
—
Unit
V
Test Conditions
I_C = 10 µA, I_E = 0
µA
mA
µA
V
pF
GHz
dB
dB
dB
dBm
V_CB = 12 V, I_E = 0
V_CE = 6 V, R_BE = ∞
V_EB = 1.5 V, I_C = 0
V_CE = 5 V, I_C = 50 mA
V_CB = 5 V, I_E = 0
f = 1 MHz
V_CE = 5 V, I_C = 50 mA
f = 1 GHz
V_CE = 5 V, I_C = 50 mA
f = 900 MHz
V_CE = 5 V, I_C = 5 mA
f = 900 MHz
V_CE = 5 V, I_C = 50 mA
f = 1 GHz
V_CE = 5 V, I_C = 50 mA
f = 800 MHz
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