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| 2SC5757 Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial VHF/UHF wide band amplifier | |||
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2SC5757
Absolute Maximum Ratings
(Ta = 25 °C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
VEBO
IC
Pc
Tj
Tstg
Ratings
10
3.5
1.5
80
80
150
â55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown V(BR)CBO 10


V
voltage
IC = 10 µA, IE = 0
Collector cutoff current
ICBO
Collector cutoff current
ICEO
Emitter cutoff current
IEBO
DC current transfer ratio
hFE
Collector output capacitance Cob
Gain bandwidth product
fT
Power gain
PG


600 nA
VCB = 10 V, IE = 0


200 nA
VCE = 3.5 V, RBE = Infinite


100 nA
VEB = 1.5 V, IC = 0
80
100 130 
VCE = 1 V, IC = 5 mA
0.9 1.2 1.5 pF
VCB = 1 V, IE = 0, f = 1 MHz
4.5 6.5 
GHz VCE = 1 V, IC = 5 mA
8
11

dB
VCE = 1 V, IC = 5 mA,
f = 900 MHz
Noise figure
NF

1.1
2.0 dB
V = 1 V, I = 5 mA,
CE
C
f = 900 MHz
Rev.4, Jul. 2001, page 2 of 10
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