2SC5629 Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

2SC5629
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
Pc
Tj
Tstg
Ratings
Unit
15
V
6
V
1.5
V
50
mA
80
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit Test Conditions
Collector to base breakdown V_(BR)CBO
15
—
—
V
voltage
I_C = 10µA , I_E = 0
Collector cutoff current
I _CBO
Collector cutoff current
I _CEO
Emitter cutoff current
I _EBO
DC current transfer ratio
h_FE
Collector output capacitance Cob
—
—
1
µA
V_CB = 12V , I_E = 0
—
—
1
mA
V_CE = 6V , R_BE = ∞
—
—
10
µA
V_EB = 1.5V , I_C = 0
80
120
160
V
V_CE = 1V , I_C = 5mA
—
1.4
1.9
pF
V_CB = 1V , I_E = 0
f = 1MHz
Gain bandwidth product
f_T
Power gain
PG
2
5
—
GHz
V_CE = 1V , I_C = 5mA
6
9
—
dB
V_CE = 1V, I_C = 5mA
f = 900MHz
Noise figure
NF
—
1.1
1.9
dB
V_CE = 1V, I_C = 5mA
f = 900MHz
2