2SC5544 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial VHF / UHF wide band amplifier

2SC5544
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
Pc
Tj
Tstg
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V_(BR)CBO
15
voltage
Collector cutoff current
I _CBO
—
Collector cutoff current
I _CEO
—
Emitter cutoff current
I _EBO
—
DC current transfer ratio
h_FE
85
Collector output capacitance Cob
—
Typ
—
—
—
—
—
0.88
Gain bandwidth product
f_T
Power gain
PG
3
6
8
11.6
Noise figure
NF
—
1.0
Ratings
15
8
1.5
50
80
150
–55 to +150
Max Unit
—
V
1
µA
1
mA
10
µA
170
V
1.4
pF
—
GHz
—
dB
2.0
dB
Unit
V
V
V
mA
mW
°C
°C
Test Conditions
I_C = 10µA , I_E = 0
V_CB = 12V , I_E = 0
V_CE = 8V , R_BE = ∞
V_EB = 1.5V , I_C = 0
V_CE = 1V , I_C = 5mA
V_CB = 1V , I_E = 0
f = 1MHz
V_CE = 1V , I_C = 5mA
V_CE = 1V, I_C = 5mA
f = 900MHz
V_CE = 1V, I_C = 5mA
f = 900MHz
2