2SC4592 Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC4592
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
Tj
Tstg
Ratings
Unit
15
V
9
V
1.5
V
50
mA
150
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Symbol Min
V_(BR)CBO
15
I _CBO
—
I _CEO
—
I _EBO
—
h_FE
40
Cob
—
Gain bandwidth product
Power gain
f_T
7.0
PG
11.0
Noise figure
NF
—
Note: Marking is “XN–”.
Typ
—
—
—
—
120
0.8
9.5
14.0
1.2
Max
—
1
1
10
250
1.5
—
—
2.5
Unit
V
µA
mA
µA
pF
GHz
dB
dB
Test conditions
I_C = 10 µA, I_E = 0
V_CB = 12 V, I_E = 0
V_CE = 9 V, R_BE = ∞
V_EB = 1.5 V, I_C = 0
V_CE = 5 V, I_C = 20 mA
V_CB = 5 V, I_E = 0,
f = 1MHz
V_CE = 5 V, I_C = 20 mA
V_CE = 5 V, I_C = 20 mA,
f = 900 MHz
V_CE = 5 V, I_C = 5 mA,
f = 900 MHz
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