2SC4261 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC4261
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
Tj
Tstg
Ratings
Unit
25
V
15
V
3
V
50
mA
100
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V_(BR)CBO
25
—
—
V
voltage
I_C = 10 µA, I_E = 0
Collector cutoff current
I _CBO
—
—
0.3 µA
V_CB = 15 V, I_E = 0
I _CEO
—
—
10
µA
V_CE = 15 V, R_BE = ∞
Emitter cutoff current
I _EBO
—
—
1.0 µA
V_EB = 3 V, I_C = 0
Collector to emitter saturation V_CE(sat) —
—
0.3 V
voltage
I_C = 20 mA, I_B = 4 mA
DC current transfer ratio
h_FE
Collector output capacitance Cob
Gain bandwidth product
f_T
Oscillating output voltage
V_OSC
50
—
180
V_CE = 5 V, I_C = 5 mA
—
0.7 1.0 pF
V_CB = 10 V, I_E = 0, f = 1MHz
1.8
2.4
—
GHz V_CE = 5 V, I_C = 20 mA
—
200 —
mV
V_CC = 5 V, I_C = 5 mA,
f = 930 MHz
Note: Marking is “QI–”.
See characteristic curves of 2SC4196.
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