2SC4197 Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC4197
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
Tj
Tstg
Ratings
Unit
25
V
13
V
3
V
50
mA
150
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector to emitter saturation
voltage
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Conversion gain
Symbol Min
V_(BR)CBO
25
I _CBO
—
I _CEO
—
I _EBO
—
V_CE(sat)
—
h_FE
50
Cob
—
f_T
3.0
CG
—
Noise figure
NF
—
Note: Marking is “TI–”.
Typ Max Unit
—
—
V
—
0.1 µA
—
10
µA
—
0.3 µA
—
0.3 V
—
180
0.85 1.3
3.8 —
19
—
pF
GHz
dB
8
—
dB
Test conditions
I_C = 10 µA, I_E = 0
V_CB = 15 V, I_E = 0
V_CE = 13 V, R_BE = ∞
V_EB = 3 V, I_C = 0
I_C = 20 mA, I_B = 4 mA
V_CE = 5 V, I_C = 5 mA
V_CB = 10 V, I_E = 0, f = 1MHz
V_CE = 5 V, I_C = 20 mA
V_CC = 5 V, I_C = 0.8 mA,
f_in = 900 MHz
f_osc = 930 MHz (–5dBm),
f_out = 30 MHz
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