2SC4050 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC4050
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
Tj
Tstg
Ratings
Unit
120
V
120
V
5
V
100
mA
150
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown
V_(BR)CBO
120
—
voltage
Collector to emitter breakdown V_(BR)CEO 120
—
voltage
Emitter to base breakdown
V_(BR)EBO
5
—
voltage
Collector cutoff current
I _CBO
—
—
Emitter cutoff current
I _EBO
—
—
DC current transfer ratio
h_FE*¹
250 —
Collector to emitter saturation V_CE(sat) —
—
voltage
Base to emitter saturation
voltage
V_BE(sat)
—
—
Notes: 1. The 2SC4050 is grouped by h_FE as follows.
2. Pluse test
Grade
D
E
Mark
KID
KIE
h_FE
250 to 500 400 to 800
Max
—
—
—
0.1
0.1
800
0.1
1.1
Unit
V
V
V
µA
µA
V
V
Test conditions
I_C = 10 µA, I_E = 0
I_C = 1 mA, R_BE = ∞
I_E = 10 µA, I_C = 0
V_CB = 70 V, I_E = 0
V_EB = 2 V, I_C = 0
V_CE = 12 V, I_C = 2 mA*²
I_C = 10 mA, I_B = 1 mA*²
I_C = 10 mA, I_B = 1 mA*²
2