2SC3867 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC3867
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
Tj
Tstg
Ratings
Unit
20
V
11
V
3
V
50
mA
150
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V_(BR)CBO
20
—
—
V
voltage
I_C = 10 µA, I_E = 0
Collector to emitter breakdown V_(BR)CEO 11
—
—
V
voltage
I_C = 1 mA, R_BE = ∞
Emitter to base breakdown
voltage
V_(BR)EBO
3
—
—
V
I_E = 10 µA, I_C = 0
Collector cutoff current
I _CBO
—
—
0.5 µA
V_CB = 15 V, I_E = 0
Collector to emitter saturation V_CE(sat) —
—
0.7 V
voltage
I_C = 10 mA, I_B = 5 mA
DC current transfer ratio
h_FE
Gain bandwidth product
f_T
Collector output capacitance Cob
Conversion gain
CG
45
—
200
V_CE = 10 V, I_C = 5 mA
2.5
3.8
—
GHz V_CE = 10 V, I_C = 10 mA
—
0.8 1.5 pF
V_CB = 10 V, I_E = 0, f = 1 MHz
10
14
—
dB
V_CC = 10 V, I_C = 1 mA,
f = 900 MHz,
Noise figure
Note: Marking is “DI–”
NF
—
10
14
dB
f_osc = 930 MHz, (–5dBm),
f_out = 30 MHz
2