2SC2471 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC2471
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
Tj
Tstg
Ratings
Unit
30
V
30
V
3
V
50
mA
310
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V_(BR)CBO 30
voltage
Collector to emitter breakdown V_(BR)CEO 30
voltage
Emitter to base breakdown
voltage
V_(BR)EBO
3
Collector cutoff current
I _CBO
—
Emitter cutoff current
I _EBO
—
Collector to emitter saturation V_CE(sat)
—
voltage
Base to emitter voltage
V_BE
DC current transfer ratio
h_FE
Gain bandwidth product
f_T
Collector output capacitance Cob
—
20
1000
—
Base time constant
r_bb’ • C_C —
Typ
—
—
—
—
—
—
—
—
2000
0.9
12
Max
—
—
—
100
100
300
0.95
—
—
1.5
20
Unit
V
V
V
nA
nA
mV
V
MHz
pF
ps
Test conditions
I_C = 10 µA, I_E = 0
I_C = 1 mA, R_BE = ∞
I_E = 10 µA, I_C = 0
V_CB = 24 V, I_E = 0
V_EB = 2 V, I_C = 0
I_C = 10 mA, I_B = 5 mA
V_CE = 10 V, I_C = 5 mA
V_CE = 10 V, I_C = 5 mA
V_CE = 10 V, I_C = 5 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
V_CB = 10 V, I_C = 5 mA,
f = 31.8 MHz
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