2SC2396 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC2396, 2SC2543, 2SC2544
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
Tj
Tstg
2SC2396
2SC2543
2SC2544
Unit
60
90
120
V
60
90
120
V
5
5
5
V
100
100
100
mA
–100
–100
–100
mA
400
400
400
mW
150
150
150
°C
–55 to +150 –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SC2396
2SC2543
2SC2544
Item
Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V_(BR)CBO 60
—
—
90 — —
120 — —
V
I_C = 10 µA, I_E = 0
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
V_(BR)CEO 60
—
—
90 — —
120 — —
V
I_C = 1 mA,
R_BE = ∞
V_(BR)EBO 5
—— 5
——
5
——
V
I_E = 10 µA, I_C = 0
Collector cutoff current I_CBO
Emitter cutoff current I_EBO
DC current transfer ratio h_FE*¹
— — 0.1 — — 0.1 — — 0.1
— — 0.1 — — 0.1 — — 0.1
250 — 1200 250 — 1200 250 — 800
Collector to emitter
saturation voltage
V_CE(sat) — — 0.2 — — 0.2 — — 0.2
Base to emitter voltage V_BE
— 0.6 — — 0.6 — — 0.6 —
Gain bandwidth product f_T
— 90 — — 90 — — 90 —
Collector output
capacitance
Cob — 3.0 — — 3.0 — — 3.0 —
Note: 1. The 2SC2396, 2SC2543 and 2SC2544 are grouped by h_FE1 as follows.
D
E
F
µA V_CB = 50 V, I_E = 0
µA V_EB = 2 V, I_C = 0
V_CE = 12 V,
I_C = 2 mA
V I_C = 10 mA,
I_B = 1 mA
V V_CE = 12 V,
I_C = 2 mA
MHz V_CE = 12 V,
I_C = 2 mA
pF V_CB = 10 V, I_E = 0,
f = 1 MHz
2SC2396, 2SC2543 250 to 500 400 to 800 600 to 1200
2SC2544
250 to 500 400 to 800 —
See characteristic curves of 2SC2545, 2SC2546 and 2SC2547.
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