1SS286 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

1SS286
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
R
I
F
Pd
Tj
Tstg
Value
Unit
25
V
35
mA
150
mW
100
°C
–55 to +100
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max
Forward voltage
Reverse voltage
Reverse current
Capacitance
V
—
—
0.6
F
V_R
25
—
—
I_R
—
—
10
C
—
—
1.2
Capacitance deviation ∆C
—
—
0.1
Forward voltage
deviation
∆V_F
—
—
10
ESD-Capability
—
10
—
—
Notes: 1. Failure criterion; I_R ≥ 20µA
2. Each group shall unify a multiple of 4 diodes
Unit
V
V
nA
pF
pF
mV
V
Test Condition
I = 10mA
F
I_R = 10µA
V_R= 10V
V_R = 0V, f = 1MHz
V_R = 0V, f = 1MHz
I = 10mA
F
*¹C = 200pF, Both forward and
reverse direction 1 pulse.
Rev.1, Sep. 1995, page 2 of 6