1SS277 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch

1SS277
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Forward current
Power dissipation
Operation temperature
Storage temperature
Symbol
VR
IF
Pd
Topr
Tstg
Value
Unit
35
V
100
mA
100
mW
-20Å`+60
°C
-55Å`+150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Reverse voltage
VR
35 Å\ Å\ V IR = 10µA
Forward voltage
VF
Å\ Å\ 1.0 V IF = 10 mA
Reverse current
IR
Å\ Å\ 10 nA VR = 25V
Capacitance
C
Å\ Å\ 1.2 pF VR = 6V, f = 1 MHz
Forward resistance rf
Å\ Å\ 0.5 Ω IF = 2 mA, f = 100 MHz