REJ03C0098_R1LV0408C Datasheet, PDF (1/14 Pages) Hitachi Semiconductor – Wide Temperature Range Version 4M SRAM (512-kword × 8-bit)

R1LV0408C-I Series
Wide Temperature Range Version
4M SRAM (512-kword × 8-bit)
REJ03C0098-0200Z
Rev. 2.00
May.25.2004
Description
The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-I Series has
realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). The R1LV0408C-I Series offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin
TSOP II and 32-pin STSOP.
Features
• Single 3 V supply: 2.7 V to 3.6 V
• Access time: 55/70 ns (max)
• Power dissipation:
 Active: 6 mW/MHz (typ)
 Standby: 1.5 µW (typ)
• Completely static memory.
 No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
 Three state output
• Directly TTL compatible.
 All inputs and outputs
• Battery backup operation.
• Operating temperature: −40 to +85°C
Rev.2.00, May.25.2004, page 1 of 12