PF08103B Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

PF08103B
MOS FET Power Amplifier Module
for E-GSM900 and DCS1800 Dual Band Handy Phone
ADE-208-785C (Z)
4th Edition
May 1999
Application
• Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz).
• For 3.5 V nominal battery use
Features
• 1 in / 2 out dual band amplifier
• Simple external circuit including output matching circuit
• Simple band switching and power control
• High gain 3stage amplifier : +1 dBm input for GSM, +4.5 dBm input for DCS
• Lead less thin & Small package : 11 × 13.75 × 1.8 mm
• High efficiency : 45% Typ at 35.0 dBm for E-GSM
35% Typ at 32.5 dBm for DCS1800