PF08103A Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

PF08103A
MOS FET Power Amplifier Module
for E-GSM900 and DCS1800 Dual Band Handy Phone
ADE-208-685B (Z)
3rd Edition
Apr. 1999
Application
• Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz).
• For 4.8 V nominal battery use
Features
• 1 in / 2 out dual band amplifier
• Simple external circuit including output matching circuit
• Simple band switching and power control
• High gain 3stage amplifier : +4.5 dBm input
• Lead less thin & Small package : 11 × 13.75 × 1.8 mm
• High efficiency : 48% Typ at 34.5 dBm for E-GSM
36% Typ at 31.5 dBm for DCS1800