PF0414B Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – MOS FET Power Amplifier Module for DCS 1800 Handy Phone

PF0414B
MOS FET Power Amplifier Module
for DCS 1800 Handy Phone
Application
For DCS 1800 class1 1710 to 1785 MHz.
Features
• 3stage amplifier : 0 dBm input
• Lead less thin & small package : 2 mm Max & 0.2cc
• High efficiency : 40% Typ at 32.5 dBm
• Wide gain control range : 70 dB Typ
• Low voltage operation : 3.5 V
Pin Arrangement
• RF-K
4 ^{GG 3}
G2
1G
1: Pin
2: Vapc
3: Vdd
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item
Supply voltage
Supply current
V_APC voltage
Input power
Operating case temperature
Storage temperature
Output power
Symbol
V_DD
I _DD
V_APC
Pin
Tc (op)
Tstg
Pout
Rating
8
2
4
10
–30 to +100
–30 to +100
3
ADE-208-432C (Z)
4th Edition
December 1997
Unit
V
A
V
mW
°C
°C
W