PF01412A Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – MOS FET Power Amplifier Module for E-GSM Handy Phone

PF01412A
MOS FET Power Amplifier Module
for E-GSM Handy Phone
Application
• For GSM class4 890 to 915 MHz
• For 5.5V nominal DC/DC converter use
Features
• High gain 3stage amplifier : 0 dBm input
• Lead less thin & Small package : 2 mm Max, 0.2cc
• High efficiency : 45% Typ at 3.8 W
• Wide gain control range : 90 dB Typ
Pin Arrangement
• RF-K
4 ^{GG 3}
G2
1G
1: Pin
2: Vapc
3: Vdd
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item
Supply voltage
Supply current
V_APC voltage
Input power
Operating case temperature
Storage temperature
Output power
Symbol
V_DD
I _DD
V_APC
Pin
Tc (op)
Tstg
Pout
Rating
10
3
4
10
–30 to +100
–30 to +100
6
ADE-208-477B (Z)
3rd Edition
February 1997
Unit
V
A
V
mW
°C
°C
W