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PF01411B Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – MOS FET Power Amplifier Module for E-GSM Handy Phone | |||
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PF01411B
MOS FET Power Amplifier Module
for E-GSM Handy Phone
Application
⢠For E-GSM class4 880 to 915 MHz
⢠For 3.5 V nominal battery use
Features
⢠High gain 3stage amplifier : 0 dBm input
⢠Lead less thin & Small package : 2 mm Max, 0.2cc
⢠High efficiency : 45% Typ at 35.5 dBm
⢠Wide gain control range : 70 dB Typ
Pin Arrangement
4 GG 3
G2
1G
1: Pin
2: Vapc
3: Vdd
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item
Supply voltage
Supply current
VAPC voltage
Input power
Operating case temperature
Storage temperature
Output power
Symbol
VDD
I DD
VAPC
Pin
Tc (op)
Tstg
Pout
Rating
8
3
4
10
â30 to +100
â30 to +100
5
ADE-208-434B (Z)
3rd Edition
Nov. 1997
Unit
V
A
V
mW
°C
°C
W
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