PF01410A Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – MOS FET Power Amplifier Module for GSM Handy Phone

PF01410A
MOS FET Power Amplifier Module
for GSM Handy Phone
Application
• For GSM class4 890 to 915 MHz
Features
• 4.8 V operation 2 stage amplifier
• Small package
• High efficiency : 45% Typ
• High speed switching : 1 µsec
Pin Arrangement
4 ^{GG 3}
G2
1G
1: Pin
2: Vapc
3: Vdd
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item
Supply voltage
Supply current
V_APC voltage
Input power
Operating case temperature
Storage temperature
Output power
Symbol
V_DD
I _DD
V_APC
Pin
Tc (op)
Tstg
Pout
Rating
10
3
4
50
–30 to +100
–30 to +100
4
ADE-208-424B (Z)
Product Preview
3rd. Edition
November 1997
Unit
V
A
V
mW
°C
°C
W