PF00105A Datasheet, PDF (1/11 Pages) Hitachi Semiconductor – MOS FET Power Amplifier Module for AMPS Handy Phone

PF00105A
MOS FET Power Amplifier Module
for AMPS Handy Phone
Features
• Low voltage operation : 4.6 V
• 2 stage amplifier : +8 dBm input
• Lead less small package : 0.2 cc
• High efficiency : 48% Typ at 1 W
• Low power control current : 500 µA Typ
Pin Arrangement
• RF-K
4 ^{GG 3}
G2
1G
1: Pin
2: Vapc
3: Vdd
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item
Supply voltage
Supply current
V_APC voltage
Input power
Operating case temperature
Storage temperature
Output power
Symbol
V_DD
I _DD
V_APC
Pin
Tc (op)
Tstg
Pout
Rating
10
1
4.5
20
–30 to +100
–30 to +100
2
ADE-208-447C (Z)
4th Edition
February 1998
Unit
V
A
V
mW
°C
°C
W