MBN400GR12BW Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon N-channel IGBT

IGBT MODULE
MBN400GS12BW
Silicon N-channel IGBT
OUTLINE DRAWING
FEATURES
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base).
Unit in mm
ABSOLUTE MAXIMUM RATINGS (Tc=25°C )
Weight: 480 (g)
E
C
E
G
TERMINALS
Item
Symbol
Unit
MBN400GS12BW
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
DC
1ms
Forward Current
DC
1ms
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Terminals
Mounting
VCES
VGES
IC
ICp
IF
IFM
Pc
Tj
Tstg
VISO
-
-
V
V
A
A
W
°C
°C
VRMS
N.m
(kgf.cm)
1,200
±20
400
800
400
(1)
800
2,000
-40 ~ +150
-40 ~ +125
2,500(AC 1 minute)
1.37(14)/2.94(30)
(2)
2.94(30)
(3)
Notes:(1)RMS Current of Diode 180Arms max.
(2)Recommended Value 1.18/2.45N.m(12/25kgf.cm)
(3)Recommended Value 2.45N.m(25kgf.cm)
CHARACTERISTICS (Tc=25°C )
Item
Collector Emitter Cut-Off Current
Symbol Unit Min. Typ. Max.
Test Conditions
I CES
mA
-
-
1.0 VCE=1,200V,VGE=0V
Gate Emitter Leakage Current
IGES
nA
-
- ±500 VGE=±20V,VCE=0V
Collector Emitter Saturation Voltage VCE(sat)
V
Gate Emitter Threshold Voltage
VGE(TO)
V
Input Capacitance
Cies
pF
Rise Time
tr
Switching Times ^{Turn On Time}
ton
ms
Fall Time
tf
-
2.7 3.4 IC=400A,VGE=15V
-
-
10 VCE=5V, IC =400mA
- 37,000 - VCE=10V,VGE=0V,f=1MHz
- 0.25 0.5 VCC=600V
-
0.4 0.7 RL=1.5W
- 0.25 0.35 RG=2.7W
(4)
Turn Off Time
toff
- 0.75 1.1 VGE=±15V
Peak Forward Voltage Drop
VFM
V
-
-
3.5 IF=400A,VGE=0V
Reverse Recovery Time
Thermal Impedance IGBT
FWD
trr
ms
-
Rth(j-c) °C/W -
Rth(j-c)
-
-
0.4 IF=400A,VGE=-10V, di/dt=400A/ms
- 0.06
Junction to case
- 0.12
Notes:(4) RG value is the test condition’s value for decision of the switching times, not recommended value.
Determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage,etc.)with appliance mounted.
PDE-N400GS12BW-0